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| BUK9214-30A TrenchMOSTM logic level FET M3D300 Rev. 01 -- 20 March 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM1 technology, featuring very low on-state resistance. Product availability: BUK9214-30A in SOT428 (D-PAK). 2. Features s s s s TrenchMOSTM technology Q101 compliant 175 C rated Logic level compatible. 3. Applications s Automotive and general purpose power switching: x 12 V loads x Motors, lamps and solenoids. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428, simplified outline and symbol Description gate (g) mb d Simplified outline Symbol drain (d) source (s) mounting base; connected to drain (d) g s MBB076 2 1 Top view 3 MBK091 SOT428 (D-PAK) 1. TrenchMOS is a trademark of Koninklijke Philips Electronics. Philips Semiconductors BUK9214-30A TrenchMOSTM logic level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 C; VGS = 5 V Tmb = 25 C Tj = 25 C; VGS = 5 V; ID = 25 A Tj = 25 C; VGS = 4.5 V; ID = 25 A Tj = 25 C; VGS = 10 V; ID = 25 A Typ 11 9 Max 30 63 107 175 14 15.5 12 Unit V A W C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter m m m 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 5 V; Figure 2 and 3 Tmb = 100 C; VGS = 5 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM peak drain current total power dissipation storage temperature operating junction temperature reverse drain current (DC) pulsed reverse drain current Tmb = 25 C Tmb = 25 C; pulsed; tp 10 s unclamped inductive load; ID = 63 A; VDS 30 V; VGS = 5 V; RGS = 50 ; starting Tj = 25 C Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 RGS = 20 k Conditions Min -55 -55 Max 30 30 15 63 45 253 107 +175 +175 63 253 230 Unit V V V A A A W C C A A mJ Source-drain diode Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 9397 750 09373 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 -- 20 March 2002 2 of 12 Philips Semiconductors BUK9214-30A TrenchMOSTM logic level FET 03aa16 120 Pder 80 ID (A) 60 03nh79 (%) 80 40 40 20 0 0 50 100 150 200 o Tmb ( C) 0 25 50 75 100 125 150 175 200 Tmb (C) P tot P der = ---------------------- x 100% P tot ( 25 C ) VGS 4.5 V Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature. 103 03nh78 ID (A) RDSon = VDS / ID 102 tp = 10 s 100 s 1 ms 10 DC 10 ms 100 ms 1 1 10 VDS (V) 102 Tmb = 25 C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 09373 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 -- 20 March 2002 3 of 12 Philips Semiconductors BUK9214-30A TrenchMOSTM logic level FET 7. Thermal characteristics Table 4: Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter Conditions Value 1.4 71.4 Unit K/W K/W thermal resistance from junction to mounting Figure 4 base thermal resistance from junction to ambient 7.1 Transient thermal impedance 10 Zth(j-mb) (K/W) 1 03nh80 = 0.5 0.2 10-1 0.1 0.05 0.02 10-2 P = Single Shot tp T tp T t 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 09373 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 -- 20 March 2002 4 of 12 Philips Semiconductors BUK9214-30A TrenchMOSTM logic level FET 8. Characteristics Table 5: Characteristics Tj = 25 C unless otherwise specified Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 0.25 mA; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 30 V; VGS = 0 V Tj = 25 C Tj = 175 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 10 V; VDS = 0 V VGS = 5 V; ID = 25 A; Figure 7 and 8 Tj = 25 C Tj = 175 C VGS = 4.5 V; ID = 25 A; VGS = 10 V; ID = 25 A; Dynamic characteristics Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Ld Ls total gate charge gate-to-source charge gate-to-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance from drain to centre of die from source lead to source bond pad VDD = 30 V; RL = 1.2 ; VGS = 5 V; RG = 10 ; VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 VGS = 5 V; VDD = 24 V; ID = 25 A; Figure 14 31 5.3 12.2 1730 400 260 10 85 94 108 2.5 7.5 2317 481 365 nC nC nC pF pF pF ns ns ns ns nH nH 11 9 14 26.6 15.5 12 m m m m 0.05 2 10 500 100 A A nA 1 0.5 1.5 2 2.3 V V V 30 27 V V Min Typ Max Unit Static characteristics 9397 750 09373 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 -- 20 March 2002 5 of 12 Philips Semiconductors BUK9214-30A TrenchMOSTM logic level FET Table 5: Characteristics...continued Tj = 25 C unless otherwise specified Symbol VSD trr Qr Parameter source-drain (diode forward) voltage reverse recovery time recovered charge Conditions IS = 20 A; VGS = 0 V; Figure 15 IS = 20 A; dIS/dt = -100 A/s VGS = -10 V; VDS = 30 V Min Typ 0.85 83 119 Max 1.2 Unit V ns nC Source-drain diode 300 ID (A) 250 03nf71 10 9 8 7 18 RDSon (m) 16 03nf70 VGS (V) = 6 200 14 150 5 12 100 4 50 10 3 2.2 0 2 4 6 8 10 VDS (V) 0 8 3 5 7 9 11 13 15 VGS (V) Tj = 25 C; tp = 300 s Tj = 25 C; ID = 25 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. 30 RDSon (m) 25 03nf72 03aa27 2 a 1.6 3 3.4 3.8 4 VGS (V) = 5 20 1.2 15 0.8 10 0.4 5 0 0 50 100 150 ID (A) 200 0 -60 0 60 120 Tj ( C) o 180 Tj = 25 C R DSon a = --------------------------R DSon ( 25 C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. 9397 750 09373 Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 -- 20 March 2002 6 of 12 Philips Semiconductors BUK9214-30A TrenchMOSTM logic level FET 2.5 VGS(th) (V) 2 max 03aa33 10-1 ID (A) 10-2 03aa36 typ 1.5 min 1 10-3 min typ max 10-4 0.5 10-5 0 -60 0 60 120 Tj (C) 180 10-6 0 1 2 VGS (V) 3 ID = 1 mA; VDS = VGS Tj = 25 C; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 50 gfs (S) 40 03nf68 3500 C (pF) 3000 2500 03nf73 30 Ciss 2000 1500 1000 Coss 20 10 500 Crss 0 0 10 20 30 40 50 60 70 ID (A) 0 10-2 10-1 1 10 VDS (V) 102 Tj = 25 C; VDS = 25 V VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 9397 750 09373 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 -- 20 March 2002 7 of 12 Philips Semiconductors BUK9214-30A TrenchMOSTM logic level FET 80 ID (A) 60 03nf69 5 VGS (V) 4 VDD = 14 V 3 VDD = 24 V 03nf67 40 2 20 1 Tj = 175 C 0 0 1 2 3 4 VGS (V) 5 Tj = 25 C 0 0 10 20 30 QG (nC) 40 VDS = 25 V Tj = 25 C; ID = 25 A Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values. 100 IS (A) 80 03nf66 60 40 20 Tj = 25 C Tj = 175 C 0 0.0 0.5 1.0 VSD (V) 1.5 VGS = 0 V Fig 15. Reverse diode current as a function of reverse diode voltage; typical values. 9397 750 09373 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 -- 20 March 2002 8 of 12 Philips Semiconductors BUK9214-30A TrenchMOSTM logic level FET 9. Package outline Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped) SOT428 seating plane y A E b2 A A1 mounting base A2 E1 D1 D HE L2 2 L L1 1 b1 e e1 b 3 wM A c 0 10 scale 20 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 2.38 2.22 A1(1) 0.65 0.45 A2 0.93 0.73 b 0.89 0.71 b1 1.1 0.9 b2 5.46 5.26 c 0.4 0.2 D 6.22 5.98 D1 min. 4.0 E 6.73 6.47 E1 e e1 HE 10.4 9.6 L 2.95 2.55 L1 min. 0.5 L2 0.9 0.5 w 0.2 y max. 0.2 4.81 2.285 4.57 4.45 Note 1. Measured from heatsink back to lead. OUTLINE VERSION SOT428 REFERENCES IEC JEDEC TO-252 JEITA SC-63 EUROPEAN PROJECTION ISSUE DATE 99-09-13 01-12-11 Fig 16. SOT428 (D-PAK). 9397 750 09373 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 -- 20 March 2002 9 of 12 Philips Semiconductors BUK9214-30A TrenchMOSTM logic level FET 10. Revision history Table 6: 01 Revision history CPCN Description Product specification, initial version. Rev Date 20020320 9397 750 09373 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 -- 20 March 2002 10 of 12 Philips Semiconductors BUK9214-30A TrenchMOSTM logic level FET 11. Data sheet status Data sheet status[1] Objective data Preliminary data Product status[2] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Product data Production [1] [2] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 12. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. 9397 750 09373 Fax: +31 40 27 24825 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 -- 20 March 2002 11 of 12 Philips Semiconductors BUK9214-30A TrenchMOSTM logic level FET Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 (c) Koninklijke Philips Electronics N.V. 2002. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 20 March 2002 Document order number: 9397 750 09373 |
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